NEF MOVPE paper published

Director Jon Heffernan and Head of MOVPE, Dr Elisa Sala, co-authored the paper titled ‘Spin properties in droplet epitaxy grown telecom quantum dots’ with the Department of Physics at the University of Sheffield, and also the University of Dortmund, which has been recently published in Physical Review B.

In the publication they explored the spin properties of telecom C-band Quantum Dots (QDs)
grown by droplet epitaxy with our ‘JR’ MOVPE showerhead reactor in Sheffield.

Results were compared to other QDs of the same type but grown with different techniques. Our
results demonstrate that our QDs exhibit favourable spin properties for implementation in quantum information applications.

Layer structure of MOVPE droplet epitaxy grown InAs/InGaAs/InP quantum dots showing the substrate, buffer layer, and three repetitions of the quantum dot active region consisting of InGaAs interlayer, InAs QDs, InP capping, and InP burial layers.
link to paper