Case Studies
Case Study
Silicon-based III-V quantum dot laser
The facility has developed high-performance semiconductor lasers monolithically grown on silicon, by exploiting unique properties of III-V quantum dots (August 2023).
The narrow optical band-gaps of antimonides play a key role in the development of next generation of infrared (IR) detectors
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An epitaxial technique, mostly used for III-V semiconductors, for the fabrication of a variety of nanostructures, such as nanoholes.
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A promising material for photonics and electronics, and we have developed an effective porosification process.
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High beam quality QCLs provide protection for airport terminals with eye-safe laser systems that can detect airborne chemical threats.
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Zero-dimensional structures which exhibit unique physical properties due to quantum mechanical effects.
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Research from the NEF and LDSD group (the University of Sheffield) has demonstrated InAs/GaAs quantum dots into waveguides.
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