The EPSRC National Epitaxy Facility can provide III-V semiconductor structures grown on either silicon or germanium substrates, via molecular beam epitaxy. Our partners located at University College London, have developed growth techniques to enable a wide range of devices using III-V semiconductors on silicon, such as: InAs Quantum Dot lasers, infrared photodetectors and nanowires all grown directly on silicon substrates.
InAs/GaAs Quantum Dot Laser Monolithically Grown on Silicon Substrate
The facility has expanded to include group IV epitaxy and hybrid III-V/Group IV epitaxy enabling capabilities in, for example, silicon photonics.
The Facility can supply large area Silicon and Silicon/Germanium wafers up to 6″ by arrangement. Please contact us for details.
Read the full capabilities of group IV MBE facility available at UCL here: NEF UCL
An MBE reactor at University College London
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Silicon-based III-V quantum dot laser
The facility has developed high-performance semiconductor lasers monolithically grown on silicon, by exploiting unique properties of III-V quantum dots.Read More