III-V Technologies

The semiconductor growth services located at Sheffield and Cambridge form the III-V semiconductor capability of the EPSRC National Epitaxy Facility. Together, Sheffield and Cambridge can supply all the important III-V materials combinations with bandgaps ranging from the ultraviolet to the mid-infrared. Grown by either molecular beam epitaxy or metal-organic chemical vapour deposition.

X-ray diffraction and transmission electron microscopy images, showing the high uniformity and quality of the interfaces within the structure of the first ever quantum cascade grown by MOVPE.

July 2024

Antimony based III-V Semiconductors

The narrow optical band-gaps of antimonides play a key role in the development of next generation of infrared (IR) detectors.

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July 2024

Porous Gallium Nitride

Porous GaN is a promising material for photonics and electronics, and we have developed an effective porosification process.

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