III-V Technologies

The semiconductor growth services located at Sheffield and Cambridge form the III-V semiconductor capability of the EPSRC National Epitaxy Facility. Together, Sheffield and Cambridge can supply all the important III-V materials combinations with bandgaps ranging from the ultraviolet to the mid-infrared. Grown by either molecular beam epitaxy or metal-organic chemical vapour deposition.

X-ray diffraction and transmission electron microscopy images, showing the high uniformity and quality of the interfaces within the structure of the first ever quantum cascade grown by MOVPE.

December 2023

Porous Gallium Nitride

Porous GaN is a promising material for photonics and electronics, and we have developed an effective porosification process.

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December 2023

Droplet Epitaxy

Droplet Epitaxy (DE) is an epitaxial technique, mostly used for III-V semiconductors, for the fabrication of a variety of nanostructures, such as Quantum Dots (QDs), Quantum Rings (QRs), and nanoholes

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