III-V Technologies
The semiconductor growth services located at Sheffield and Cambridge form the III-V semiconductor capability of the EPSRC National Epitaxy Facility. Together, Sheffield and Cambridge can supply all the important III-V materials combinations with bandgaps ranging from the ultraviolet to the mid-infrared. Grown by either molecular beam epitaxy or metal-organic chemical vapour deposition.
X-ray diffraction and transmission electron microscopy images, showing the high uniformity and quality of the interfaces within the structure of the first ever quantum cascade grown by MOVPE.
Case Studies
View all Case StudiesSite-controlled quantum dot arrays in waveguides for quantum technology applications
Research from the NEF, together with the LDSD group at the University of Sheffield, has demonstrated InAs/GaAs quantum dots into waveguides.
Read MoreAntimony based III-V Semiconductors
The narrow optical band-gaps of antimonides play a key role in the development of next generation of infrared (IR) detectors.
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