The semiconductor growth services located at Sheffield and Cambridge form the III-V semiconductor capability of the EPSRC National Epitaxy Facility. Together, Sheffield and Cambridge can supply all the important III-V materials combinations with bandgaps ranging from the ultraviolet to the mid-infrared. Grown by either molecular beam epitaxy or metal-organic chemical vapour deposition.
X-ray diffraction and transmission electron microscopy images, showing the high uniformity and quality of the interfaces within the structure of the first ever quantum cascade grown by MOVPE.
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Porous Gallium Nitride
Porous GaN is a promising material for photonics and electronics, and we have developed an effective porosification process.Read More
Droplet Epitaxy (DE) is an epitaxial technique, mostly used for III-V semiconductors, for the fabrication of a variety of nanostructures, such as Quantum Dots (QDs), Quantum Rings (QRs), and nanoholesRead More