Recruitment for MBE Research Associate

We are recruiting a Research Associate in Molecular Beam Epitaxy!

The role is based at the Facility at the University of Sheffield, in the School of Electrical and Electronic Engineering.

The successful applicant will carry out original research on III-V semiconductor epitaxy contributing to a number of research projects in the areas of quantum technologies and integrated photonics.

The role involves the development of MBE of III-V semiconductors, such as As, P, Sb or Bi-based, with access to three MBE reactors in the Facility as well as major infrastructure for characterization and device fabrication.

The successful applicant will develop epitaxy techniques for major innovations, including site-control of quantum dots, selective area growth, hybrid metal-semiconductor structures, and new types of mixed materials for lasers and detectors. They will also work with a range of collaborators and users of the Facility and will play a critical role in the development of unique and pioneering device concepts through world-class advanced MBE growth. 

The closing date for applications is Wednesday 16th July, with successful applicants being invited to a selection process the week commencing 28th July.

This is an exciting opportunity to join as at the National Epitaxy Facility and lead high quality semiconductor research.

To view the full job description and to apply, please click on the following link: University of Sheffield MBE Job Description