Research Updates

This paper investigates the effects of temperature on an InGaP (GaInP) 55Fe X-ray photovoltaic cell prototype for a radioisotope microbattery (also called a nuclear microbattery). An In0.5Ga0.5P p-i-n (5 ?m i-layer) mesa photodiode was illuminated by a standard 206 MBq 55Fe radioisotope X-ray source and characterised over the temperature range ?20?°C to 100?°C .....

Single photons from semiconductor quantum dots are promising resources for linear optical quantum computing, or, when coupled to spin states, quantum repeaters. To realize such schemes, the photons must exhibit a high degree of indistinguishability .....

When using avalanche photodiodes (APDs) in applications, temperature dependence of avalanche breakdown voltage is one of the performance parameters to be considered. Hence, novel materials developed for APDs require dedicated experimental studies .....

We report magnetotransport measurements of InSb/Al1?xInxSb quantum well structures at low temperature (3 K), with evidence for 3 characteristic regimes of electron carrier density and mobility .....

We study the spin-orbit interaction (SOI) in InAs/GaSb and InAs quantum wells .....

We demonstrate a scheme for in-plane initialization of a single exciton spin in an InGaAs quantum dot (QD) coupled to a GaAs nanobeam waveguide .....