MOVPE studies of zincblende GaN on 3C-SiC/Si(001)
Published June 2023. Journal of Crystal Growth. Wade, TJ et al.Read More
Decoupling of the many-body effects from the electron mass in GaAs by means of reduced dimensionality.
Published March 2023. Physical Review B. Vianez, PMT et al.Read More
Observation of large spontaneous emission rate enhancement of quantum dots in a broken-symmetry slow-light waveguide.
Published February 2023. NPJ Quantum Information. Siampour, H et al.Read More
Exploring the formation of InAs(Bi)/GaAs QDs at two growth-temperature regimes under different Bi supply conditions.
Published January 2023. Applied Surface Science. Flores, S et al.Read More
Droplet epitaxy of InAs/InP quantum dots via MOVPE by using an InGaAs interlayer
Published November 2021. Nanotechnology Volume 33. Elisa M Sala et al 2022.Read More
Two-particle time-domain interferometry in the fractional quantum Hall effect regime
Published October 2022. Nature Communications. Taktak, I et al.Read More
Optimal Purification of a Spin Ensemble by Quantum-Algorithmic Feedback
Published July 2022. Physical Review X. Jackson, DM et al.Read More
Control of Morphology and Substrate Etching in InAs/InP Droplet Epitaxy Quantum Dots for Single and Entangled Photon Emitters
Published May 2022. ACS Appl. Nano Mater. 2022. Gajjela et al.Read More
Influence of Al (x) Ga1-x N nucleation layers on MOVPE-grown zincblende GaN epilayers on 3C-SiC/Si(001)
Published April 2022. Journal of Physics D-Applied Physics. Gundimeda et al.Read More
Nanoscale wafer patterning using SPM induced local anodic oxidation in InP substrates
Published February 2022. Semiconductor Science and Technology. Ovenden, C et al.Read More