Some of our Pump Priming projects include:

• InGaAs Quantum Dot/Quantum Well based waveguide structures for photonic integration
• Selective growth of GaN on Si on sapphire for CMOS integration
• Near surface InAs Quantum Dots for plasmonic coupling
• Ultrafast multi-active region Quantum Dot lasers
• Semiconductor-Superconductor hybrid 2DEG devices
• Green emitters for surface enhanced Raman sensors
• Droplet epitaxy for quantum emitters
• GeSn for photodetector applications

The Pump Priming scheme has recently been expanded thanks to new partnerships to include novel and emerging materials, such as:

• Gallium Oxide (via University of Bristol and Swansea University)
• Silicon Carbide (via University of Warwick)
• 2D Transition Metal Dichalcogenides (TMDs) (via University of Southampton)
• II-VIs (via Swansea University)
• 2D III-VIs (e.g., GaSe) and h-BN (via University of Nottingham)
• Topological Insulators (Bi,Se,Te,Sb) (via University of Leeds)
• THz and mid-IR devices (via University of Leeds)

The epitaxy is provided thanks to the universities listed above, but to access the scheme you need to apply through the National Epitaxy Facility.