Epitaxy Offer
Growth at the National Epitaxy Facility is either by Molecular Beam Epitaxy (MBE) or Metal-Organic Vapour Phase Epitaxy (MOVPE).
MBE
MBE is grown at the University of Sheffield and University College London.
The University of Sheffield covers the full spectrum of III-V materials to enable the production of a wide variety of epitaxy structures and devices.
University College London provides group IV epitaxy and hybrid III-V/Group IV epitaxy enabling capabilities for silicon photonics.
MOVPE
MOVPE growth is located at the Universities of Sheffield and Cambridge
At the University of Sheffield, MOVPE growth production includes a wide range of Arsenide and Phosphide on InP and GaAs substrates
Gallium Nitride Epitaxy is grown by MOVPE at the Cambridge Centre for Gallium Nitride at the University of Cambridge