Epitaxy Offer

Growth at the National Epitaxy Facility is either by Molecular Beam Epitaxy (MBE) or Metal-Organic Vapour Phase Epitaxy (MOVPE). 

MBE

MBE is grown at the University of Sheffield and University College London. 

The University of Sheffield covers the full spectrum of III-V materials to enable the production of a wide variety of epitaxy structures and devices. 

University College London provides group IV epitaxy and hybrid III-V/Group IV epitaxy enabling capabilities for silicon photonics.

mbe page
Link to MBE page
Link to MOVPE page

MOVPE

MOVPE growth is located at the Universities of Sheffield and Cambridge 

At the University of Sheffield, MOVPE growth production includes a wide range of Arsenide and Phosphide on InP and GaAs substrates

Gallium Nitride Epitaxy is grown by MOVPE at the Cambridge Centre for Gallium Nitride at the University of Cambridge

movpe page