Electrical
Sheffield
WEP ECV System:
- Doping profiles possible through several epitaxial layers with etch rates typically ~0.5um/hr
- ECV (Electrochemical Capacitance-Voltage) profiling of up to 6 inch wafers for a wide variety of III-V materials.
Hall Effect Measurement Systems:
Nanomagnetic Instruments HEMS System
- Fully equipped Hall system for basic characterization and in-depth scientific measurements
- Van der Pauw & Hall Bar samples with up to 6 electrical connections
- Variable field electromagnets: up to 2.5T
- Variable temperature cryostat: 2 – 350K.
Ecopia HMS5000 System:
- Rapid measurement of resistivity, carrier concentration and mobility
- Fixed field, room temperature and 77K
Cambridge
Variable temperature Hall measurements
- Allowing measurement of carrier concentration and mobility at temperatures down to 80 K.
Mercury probe C-V measurements
- Allowing non-destructive on-wafer estimations of doping profiles.
Scanning Probe Microscopy
- Topographical and electrical measurements at the nanoscale on semiconductor wafers up to 8 inches in diameter
- Available electrical techniques include Scanning Capacitance Microscopy, PeakForce Tunnelling AFM and Photoconductive AFM
