Characterization
The National Epitaxy Facility has an extensive range of semiconductor characterization tools across all the three sites.
Once epitaxial wafers are grown, they need to be tested using various microscopy (scanning-electron, atomic-force, Nomarski), diffraction, and photo-luminescence methods to check they meet the required specifications in accordance with our ISO9001 Quality Management System.
Please see the range of equipment and characterization techniques available at the Facility below.
Electrical
Advanced tools such as probe stations, an eCV profiler, and variable Hall measurement systems for carrier properties and device performance analysis in semiconductors.
Optical
Room-temperature PL, low-temperature PL & EL, and μPL for investigating the optical properties of semiconductor materials.
Structural
AFM, SEM, and XRD for analysing surface morphology and crystal structure in semiconductors.
