Research Updates
High-quality germanium growth on (111)-faceted V-groove silicon by molecular beam epitaxy
High-quality germanium growth on (111)-faceted V-groove silicon by molecular beam epitaxy. Published June 2024. Journal of Physics D-Applied Physics. Mtunzi, M et al.
Read MoreThe growth of low-threading-dislocation-density GaAs buffer layers on Si substrates
The growth of low-threading-dislocation-density GaAs buffer layers on Si substrates. Published July 2023. Dang, M et al. Journal of Physics D-Applied Physics.
Read MoreDifferent Doping Behaviors of Silicon in Zinc Blende and Wurtzite GaAs Nanowires: Implications for Crystal-Phase Device Design
Different Doping Behaviors of Silicon in Zinc Blende and Wurtzite GaAs Nanowires: Implications for Crystal-Phase Device Design. Published July 2023. ACS Applied Nano Materials. Hou, QC et al.
Read MoreHigh Operating Temperature Mid-Infrared InGaAs/GaAs Submonolayer Quantum Dot Quantum Cascade Detectors on Silicon
Published April 2023. IEEE Journal of Quantum Electronics. Guo, DQ et al.
Read MoreMonolithically integrated photonic crystal surface emitters on silicon with a vortex beam by using bound states in the continuum
Published April 2023. Optics Letters. Li, HC et al.
Read MoreThe epitaxial growth and unique morphology of InAs quantum dots embedded in a Ge matrix
Published December 2022. Journal of Physics D-Applied Physics. Jia, H et al.
Read MoreMonolithically Integrated Ultralow Threshold Topological Corner State Nanolasers on Silicon
Published November 2022. ACS Photonics. Zhou, T et al.
Read MoreA thermally erasable silicon oxide layer for molecular beam epitaxy
Published October 2022. Journal of Physics D-Applied Physics. Hou, Y et al.
Read MoreSingle-Mode Photonic Crystal Nanobeam Lasers Monolithically Grown on Si for Dense Integration
Published May 2022. IEEE Journal of Selected Topics in Quantum Electronics. Zhou, T et al.
Read MoreRecent Progress of Quantum Dot Lasers Monolithically Integrated on Si Platform
Published February 2022. Frontiers in Physics. Cao, V et al.
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