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September 2021

Job vacancy, Research Associate in Metal Organic Vapour Phase Epitaxy (MOVPE)

The post holder will be based in the National Epitaxy Facility in Sheffield which is located within the Department of EEE. The post holder will carry out original research on III-V semiconductor epitaxy and, as part of the National Epitaxy Facility, will provide bespoke epitaxial wafers to academic and industrial users in the UK and internationally. The Facility currently supports over £100m of research grants in more than 20 UK Universities and plays a major role in UK semiconductor research through the provision of world class epitaxial materials.

They will be responsible for the development of MOVPE growth of As, P, and Sb based III-V semiconductors and will have access to the extensive MOVPE facilities in the Facility (three reactors) as well as major infrastructure for characterization and device fabrication. The role will involve development of the epitaxy technique itself, investigating such major innovations as site-control of quantum dots, selective area growth, III-V/Silicon growth, and new types of mixed material interband lasers and detectors. The post holder will also work with a range of collaborators and users of the Facility and will play a critical role in the development of unique and pioneering device concepts through world-class advanced MOVPE growth.

For an application form and further details: