Facilities

Gallium Nitride Epitaxy (MOCVD)

The Cambridge Centre for Gallium Nitride has two MOCVD growth machines. A Thomas Swan reactor, with a 6 x 2 inch wafer capacity and an Aixtron reactor capable of growing 6 inch wafers. Through the resources provided by our Cambridge partners an extensive range of characterisation techniques are available to support the development of new GaN technologies.

Structures and devices include:

  • GaN, AlN, InGaN, AlGaN, AlInN and InAlGaN
  • LEDs, UV LEDs, HEMTs, GaN on diamond and GaN on silicon

External characterization capabilities include:

  • high resolution X-ray diffractometry
  • cathodoluminescence
  • electron holography for internal electric field measurements
  • AFM
  • and TEM microscopy.

Further details of the Cambridge capabilities can be found at: http://www.gan.msm.cam.ac.uk/