Gallium Nitride Epitaxy (MOCVD)
The Cambridge Centre for Gallium Nitride has two MOCVD growth machines. A Thomas Swan reactor, with a 6 x 2 inch wafer capacity and an Aixtron reactor capable of growing 6 inch wafers. Through the resources provided by our Cambridge partners an extensive range of characterisation techniques are available to support the development of new GaN technologies.
Structures and devices include:
- GaN, AlN, InGaN, AlGaN, AlInN and InAlGaN
- LEDs, UV LEDs, HEMTs, GaN on diamond and GaN on silicon
External characterization capabilities include:
- high resolution X-ray diffractometry
- electron holography for internal electric field measurements
- and TEM microscopy.
Further details of the Cambridge capabilities can be found at: http://www.gan.msm.cam.ac.uk/