Facilities
Metal-Organic Vapour Phase Epitaxy (MOVPE)
MOVPE growth production within the National Epitaxy Facility is provided at the University of Sheffield, We can grow a wide range of arsenide and phosphide on InP and GaAs substrates.
Read MoreMolecular Beam Epitaxy (MBE)
MBE growth within the National Epitaxy Facility covers the full spectrum of iii-v materials to enable the production of a wide variety of epitaxy structures and devices.
Read MoreGallium Nitride Epitaxy (MOVPE)
Nitride growth within the National Epitaxy Facility is provided by the Cambridge Centre for Gallium Nitride at the University of Cambridge.
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