The twin chamber system enables growth in group IV (Si ,Ge) and group III-V (GaAs, InP) materials, without exposing the wafer to the laboratory environment.
The ability to maintain and transfer wafers under high vacuum from one chamber to the other, ensures the growth surfaces are kept in an ultra-pristine state. Leading to a very low number defects propagating through the growth structure, which in turn results in high quality, high performance devices.